Transparent Conducting Oxide Based High Speed Organic Electro-Optic Modulator

In collaboration with the groups of Tobin J. Marks and Alex Jen, Seng-Tiong Ho's group achieved VpiL=0.89V-cm with a pure phase modulator, which corresponds to VpiL=0.45V-cm in push-pull structure. Compared with conventional structures which can only achieve 6.5V-cm due to the large switching voltage applied on the thick cladding layer, the Transparent Conducting Oxide (TCO) based structure can directly apply the switching voltage on the electro-optic layer and therefore achieves 6.5X higher performance. Simulation shows the modulator can operate at 40GHz. The high speed sub-1V electro-optic modulator finds various applications in optical communication, RF photonics, and optical interconnect.

a) Schematic of device. b) Measurement result for a 3.8mm device with Vpi=2.73V

 

Shuai Wu, Fei Yi, Boyang Liu, Yingyan Huang, Seng-Tiong Ho, Yiliang Wang, Jun Liu, Hu Kang, Tobin J. Marks Jingdong Luo, Neil Tucker, and Alex K. –Y. Jen, “Transparent Conducting Oxide (TCO) Electrode Based High-speed Organic Electro-optic (EO) Modulator” Proc. CLEO2007 (May 6, 2007). ABSTRACT

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The Materials Research Science and Engineering Center (MRSEC) is supported by the National Science Foundation under NSF Award Number DMR-0520513. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation.
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